Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same
US8026506B2 · kind B2 · utility
18Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jan 30, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jun 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.