Semiconductor structures
US8026517B2 · kind B2 · utility
1Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.