LEDs with low optical loss electrode structures

US8026524B2 · kind B2 · utility

Assignee

• Bridgelux, Inc. · US

Inventors

• Frank Shum · Sunnyvale, US
• William W. So · Sunnyvale, US
• Steven D. Lester · Palo Alto, US

Key dates

• Filing date: Sep 22, 2010
• Grant date: Sep 27, 2011
• Expiry date: Sep 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.