Thin film transistor and organic electroluminescence display using the same
US8026535B2 · kind B2 · utility
3Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Jan 24, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jan 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.