Semiconductor device and manufacturing method thereof
US8026554B2 · kind B2 · utility
1Cited by
5References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 24, 2006 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Apr 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a silicon substrate; and a field effect transistor including a gate insulating film over the silicon substrate, a gate electrode on the gate insulating film, and source and drain regions. The gate electrode includes, in part in contact with the gate insulating film, a crystallized Ni silicide region containing an impurity element of a conductivity type opposite to a conductivity type of a channel region in the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.