Patent · US Active

Electron emission light-emitting device and light emitting method thereof

US8026657B2 · kind B2 · utility

0Cited by
3References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 18, 2007
Grant dateSep 27, 2011
Priority date
Expiry dateAug 8, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J63/08
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An electron emission light-emitting device includes a cathode structure, an anode structure, a fluorescent layer, and a low-pressure gas layer. The fluorescent layer is located between the cathode structure and the anode structure. The low-pressure gas layer is filled between the cathode structure and the anode structure, having a function of inducing the cathode to emit electron uniformly. The low-pressure gas layer has an electron mean free path, allowing at least sufficient amount of electrons to directly impinge the fluorescent layer under an operation voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.