Semiconductor device
US8027370B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.