Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film
US8029655B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 3, 2006 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Apr 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.