Patent · US Active

Method of fabricating structures based on nanoparticles

US8029722B2 · kind B2 · utility

7Cited by
7References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 2008
Grant dateOct 4, 2011
Priority date
Expiry dateOct 13, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/254
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

This publication discloses a method for creating nanoscale formations. According to the method, a filler matrix and first nanoparticles embedded in the filler matrix, and two conductive electrodes are superimposed on the insulating material layer. According to the invention, a voltage is applied between the conductive electrodes, a filler matrix is used and first nanoparticles have substantially different electrical properties in order to induce self-organized localized contact creation when said voltage is applied. Potential applications of the invention include e.g. parallel-plate capacitor structures based on metal-oxide nanoparticles, such as memory cells, and high-permittivity/tunable capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.