Method of depositing Ge-Sb-Te thin film
US8029859B2 · kind B2 · utility
3Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2006 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Nov 19, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.