Epitaxial growth of in-plane nanowires and nanowire devices
US8030108B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Feb 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.