Semiconductor light emitting device, method of manufacturing same, and optical module
US8030109B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Aug 13, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Apr 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.