Method for fabricating MEMS device
US8030112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2010 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.