Methods of forming a compound semiconductor device including a diffusion region
US8030188B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Oct 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.