Patent · US Active

Method for maintaining a smooth surface of crystallizable material

US8030189B2 · kind B2 · utility

1Cited by

1References

19Claims

0Family size

Assignee

National Taiwan University · TW

Inventors

Ching-Fuh Lin · Taipei, TW
Cha-Hsin Chao · Taipei, TW
Wen-Han Lin · Taipei, TW

Key dates

Filing date	Oct 28, 2009
Grant date	Oct 4, 2011
Priority date	—
Expiry date	Nov 19, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for maintaining a smooth surface of crystallizable material is disclosed. First, a substrate is provided. A target material layer is then formed on the substrate, with the target material being a crystallizable material. A protecting layer is subsequently formed on the target material layer. Next, an annealing treatment is implemented, with the surface of the target material layer, facing the protecting layer, being maintained in its original smooth state by the pressure and/or adhesion of the protecting layer. Finally, the protecting layer is removed to leave an open and smooth surface of the processed crystallizable material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.