Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser
US8030224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2010 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.