Semiconductor device

US8030660B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Yasunobu Saito · Tokyo, JP
• Wataru Saito · Yokohama, JP
• Yorito Kakiuchi · Yokohama, JP
• Tomohiro Nitta · Yokohama, JP
• Akira Yoshioka · Yokohama, JP
• Tetsuya Ohno · Kawasaki, JP
• Hidetoshi Fujimoto · Yokohama, JP
• Takao Noda · Yokohama, JP

Key dates

• Filing date: Feb 13, 2009
• Grant date: Oct 4, 2011
• Expiry date: Aug 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.