Power conversion apparatus
US8030661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Mar 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/081
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In the case where a chip is made of wide band gap semiconductor, a power conversion apparatus is obtained in which a component having a low heat resistant temperature is prevented from receiving thermal damage by heat generated at the chip. In a configuration including: a chip portion (20) including a chip (21) made of wide band gap semiconductor and a member (22, 23) having a heat resistant temperature equal to or higher than that of the chip (21); and a peripheral component (25) arranged in the vicinity of the chip portion (20) and having a heat resistant temperature lower than that of the chip (21). The chip (21) and the peripheral component (25) are thermally insulated from each other so that the temperature of the peripheral component (25) does not exceed the heat resistant temperature of the peripheral component (25).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.