Light emitting device
US8030664B2 · kind B2 · utility
6Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Apr 28, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
Abstract
There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.