Mesa-type photodetectors with lateral diffusion junctions
US8030684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.