Semiconductor device and method for manufacturing the same
US8030686B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Feb 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
Abstract
A semiconductor device having a source electrode and a drain electrode formed over a semiconductor substrate, a gate electrode formed over the semiconductor substrate and disposed between the source electrode and the drain electrode, a protection film made of an insulating material and formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, and a gate side opening formed at least in one of a portion of the protection film between the source electrode and the gate electrode and a portion of the protection film between the drain electrode and the gate electrode and disposed away from all of the gate electrode, the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.