Flash memory device and program method thereof
US8031525B2 · kind B2 · utility
6Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2008 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Jan 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device that includes a voltage generator circuit configured to generate a program voltage, a pass voltage, and a high voltage; a plurality of planes configured to perform a program operation in response to the program, pass, and high voltages and to verify the program operation, respectively; and control logic configured to control the planes in response to verification results from the planes, wherein the control logic controls the planes so as to interrupt the program and pass voltages or the high voltage from being applied to program-passed planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.