Passively Q-switched microlaser with controllable peak power density
US8031749B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2006 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1643
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Geometrical design of laser microchips is disclosed that allows variation of the optical path length in the different media by simple displacement of the microchip, the movement having a non-zero projection orthogonal to the pump beam. The concept can be implemented to vary optical loss in the lasing cavity, the absorbed pump power, or the optical length of the cavity. Passively Q-switched microchip laser output performance can thus be controlled by simple transverse displacement of the microchip relative to the pump beam. The above microlaser can be combined with voltage-controlled variable-focus output optics in order to control the peak power density of the laser pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.