VCSEL optimized for high speed data
US8031752B1 · kind B1 · utility
7Cited by
137References
8Claims
0Family size
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Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Oct 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.