Semiconductor optical modulator
US8031984B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 24, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Oct 25, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/101
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (10) according to an embodiment of the present invention is an npin-type semiconductor optical modulator in which layers are sequentially stacked, with a cathode layer (12-1) arranged on the substrate side, including at least a first n-type cladding layer (13-1), a p-type cladding layer (14), a core layer (17) and a second n-type cladding layer (13-2). In this semiconductor optical modulator, the p-type cladding layer (14) is electrically connected to an electrode (18-1) of the cathode layer. Accordingly, the accumulation of holes in the p-type cladding layer associated with light absorption in the npin-type optical modulator can be absorbed in the electrode on the negative side. This npin-type semiconductor optical modulator can be comparatively easily fabricated using conventional semiconductor manufacturing techniques by adopting a mesa type waveguide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.