Patent · US Active

Nano-soldering to single atomic layer

US8033445B1 · kind B1 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 2008
Grant dateOct 11, 2011
Priority date
Expiry dateApr 15, 2030

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y40/00
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.