Method of manufacturing field emission device
US8033881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Nov 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a field emission device comprises: sequentially forming cathodes and a light blocking layer on a substrate, and patterning the light blocking layer to form blocking layer holes; sequentially forming an insulating layer and a gate material layer on the light blocking layer, and patterning the gate material layer to form gate electrodes in which gate electrode holes are formed; coating a photoresist on the gate electrodes, and exposing and developing the photoresist to form resist holes inside the gate electrode holes; isotropically etching portions of the insulating layer exposed through the resist holes to form insulating layer holes; etching portions of the gate electrodes exposed by the insulating layer holes to form gate holes, and removing the photoresist; and forming emitters on the cathode electrodes exposed by the blocking layer holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.