Low temperature growth of oriented carbon nanotubes

US8034218B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean Dijon · Le Pont-de-Claix, FR
• Hélène Le Poche · Grenoble, FR
• Thomas Goislard de Monsabert · Meylan, FR

Key dates

• Filing date: Jul 6, 2005
• Grant date: Oct 11, 2011
• Expiry date: Jun 10, 2027

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C2218/32
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The invention concerns a method for growing oriented carbon nanotubes on a sample using a target of carbon or a variety of carbon in a deposition chamber where a plasma predominates. The sample (16) is arranged in contact with the target (15), in such a way that the target has a free surface and that the sample offers a free surface, the plasma causing the growth of carbon nanotubes on the free surface of the sample.