Annealing method of zinc oxide thin film
US8034656B2 · kind B2 · utility
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3References
17Claims
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Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Jun 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.