Polysilicon film, thin film transistor using the same, and method for forming the same
US8034671B2 · kind B2 · utility
5Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Aug 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.