Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed
US8034683B2 · kind B2 · utility
6Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 20, 2007 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Apr 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.