Method for fabricating semiconductor device
US8034693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Nov 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.