Method of fabricating high aspect ratio metal structures
US8034719B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2005 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
To fabricate high aspect ratio metal structures, a two-layer structure is provided on a conductive layer. The two-layer structure includes a first layer adjacent the conductive layer and a second layer adjacent the first layer where the second layer is etchable by a Deep Reactive Ion Etching (DRIE) process. Using the DRIE process, at least one selected region of the second layer is completely etched away with the selected region being at least partially aligned with a region of the conductive layer such that the first layer is then exposed thereover. The first layer so-exposed is then removed to expose the region of the conductive layer thereunder. Metal is electroplated onto the exposed conductive layer and any remaining portions of the two-layer structure are then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.