Patent · US Active

SIC power DMOSFET with self-aligned source contact

US8035112B1 · kind B1 · utility

36Cited by
25References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2009
Grant dateOct 11, 2011
Priority date—
Expiry dateJul 23, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/519
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An intermediate product in the fabrication of a MOSFET, including a silicon carbide wafer having a substrate and a drift layer on said substrate, said drift layer having a plurality of source regions formed adjacent an upper surface thereof; a first oxide layer on said upper surface of said drift layer; a plurality of polysilicon gates above said first oxide layer, said plurality of polysilicon gates including a first gate adjacent a first of said source regions; an oxide layer over said first source region of greater thickness than said first oxide layer; and, an oxide layer over said first gate of substantially greater thickness than said oxide layer over said first source region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.