Color image sensor with improved optical crosstalk
US8035144B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2007 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Sep 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention proposes positioning, between the adjacent filters of different colors (FR, FB, FV), a wall (20) of a material tending to reflect the light so that the light arriving obliquely on a determined filter corresponding to a first pixel does not tend to pass toward an adjacent filter or toward a photosensitive zone corresponding to an adjacent pixel but is returned by the wall to the first filter or the photosensitive zone corresponding to the first pixel. The wall is preferably made of a material with a high reflection coefficient such as aluminium and it is sunk depthwise into the thinned semiconductor layer (16), preferably in p+ diffusions formed in the layer if it is of p-type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.