Method for predicting the formation of silicon nanocrystals in embedded oxide matrices
US8036864B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for predicting the formation of silicon nanocrystals in an oxide matrix is disclosed. Initially, fundamental data for a set of microscopic processes that can occur during one or more material processing operations are obtained. Kinetic models are then built by utilizing the fundamental data for a set of reactions that can contribute substantially to the formation of silicon nanocrystals in a silicon oxide matrix. Finally, the kinetic models are applied to predict shape, size distribution, spatial arrangements of silicon nanocrystals.
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