Epitaxial growth and cloning of a precursor chiral nanotube
US8038795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Apr 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/751
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A precursor chiral nanotube with a specified chirality is grown using an epitaxial process and then cloned. A substrate is provided of crystal material having sheet lattice properties complementary to the lattice properties of the selected material for the nanotube. A cylindrical surface(s) having a diameter of 1 to 100 nanometers are formed as a void in the substrate or as crystal material projecting from the substrate with an orientation with respect to the axes of the crystal substrate corresponding to the selected chirality. A monocrystalline film of the selected material is epitaxially grown on the cylindrical surface that takes on the sheet lattice properties and orientation of the crystal substrate to form a precursor chiral nanotube. A catalytic particle is placed on the precursor chiral nanotube and atoms of the selected material are dissolved into the catalytic particle to clone a chiral nanotube from the precursor chiral nanotube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.