Patent · US Active

Coaxial plasma arc vapor deposition apparatus and method

US8038858B1 · kind B1 · utility

40Cited by
19References
38Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2005
Grant dateOct 18, 2011
Priority date
Expiry dateSep 9, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/34
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An apparatus for deposition of plasma reaction films includes a substrate for the deposition of either thin or thick films. The substrate also allows for a film deposition which adheres to the substrate, and also films which may be removed after deposition. The cathode may be fabricated from individual wires, or it may be fabricated from a single conductor. A macro-particle filter which preferentially traps larger particles may be introduced between a porous cathode and the deposition surface. The macro-particle filter may also carry electrical current as is useful for generating a magnetic field such that a Lorentz force acts preferentially on ionized particles, allowing them to pass through the filter while trapping macroparticles that are not influenced by the magnetic field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.