Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor
US8039294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.