Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated
US8039297B2 · kind B2 · utility
5Cited by
2References
13Claims
0Family size
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Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Phase change memory devices may be fabricated by forming a first electrode on a substrate and forming a chalcogenide material on the first electrode. The chalcogenide material is plasma treated sufficiently to induce a plasma species throughout the chalcogenide material. A second electrode is formed on the chalcogenide material. Related devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.