Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layer
US8039372B2 · kind B2 · utility
8Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Aug 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
Abstract
A phase changeable memory device is manufactured by forming at least one insulating layer on a substrate. A preliminary first electrode is formed on the insulating layer. The preliminary first electrode is partially etched to form a first electrode electrically connected to the substrate. After the preliminary first electrode is formed, both sidewalls of the preliminary first electrode are partially etched isotropically to form a first electrode having a uniform width and height. A phase changeable material layer pattern and a second electrode are subsequently formed on the first electrode. Related devices also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.