Methods of forming layers of alpha-tantalum
US8039394B2 · kind B2 · utility
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2References
23Claims
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Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.