Performance solid state detectors
US8039808B2 · kind B2 · utility
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2References
28Claims
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Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Nov 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
An imaging detector is formed from a conversion material and electrodes that are separated by trenches formed in the conversion material. The trenches increase the distance of the conductance path between electrodes or accommodate a grid of electrodes, thereby reducing current leakage between electrodes. In some embodiments, a passivation layer is used to provide improved adhesion of the electrodes to the conversion material or to shield the electrodes from grid electrode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.