Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts
US8039834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2007 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Jun 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.