Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus
US8039835B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 14, 2007 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Dec 30, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.