Thin film transistor and display device including thin film transistor

US8039842B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventor

• Yasuhiro Jinbo · Atsugi, JP

Key dates

• Filing date: May 15, 2009
• Grant date: Oct 18, 2011
• Expiry date: Jan 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A thin film transistor with favorable electric characteristics is provided, which includes a gate electrode layer; a first insulating layer covering the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions, which are provided with a distance therebetween and at least partly overlap with the gate electrode layer; a microcrystalline semiconductor layer which is provided over the first insulating layer in part of a channel formation region, and at least partly overlaps with the gate electrode layer and does not overlap with at least one of the pair of impurity semiconductor layers; a second insulating layer between and in contact with the first insulating layer and the microcrystalline semiconductor layer; and an amorphous semiconductor layer over the first insulating layer, covering the second insulating layer and the microcrystalline semiconductor layer. The first insulating layer is a silicon nitride layer and the second insulating layer is a silicon oxynitride layer.