Multifinger carbon nanotube field-effect transistor
US8039870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2008 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Feb 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.