Semiconductor integrated circuit
US8039874B2 · kind B2 · utility
3Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Dec 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/919
Abstract
According to an aspect of the present invention, there is provided a semiconductor IC that includes a plurality of standard cells arranged in a first direction on a semiconductor substrate, and a first diffusion layer connected to a first power source and a second diffusion layer connected to a second power source in the each standard cell, wherein the first diffusion layers as well as the second diffusion layers of neighboring standard cells are integrally formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.