Memory devices having a carbon nanotube
US8039919B2 · kind B2 · utility
7Cited by
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10Claims
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Assignee
Inventors
Key dates
| Filing date | May 20, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.