Quad SRAM based one time programmable memory
US8040748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Sep 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A differential latch-based one time programmable memory cell is provided. The differential latch-based one time programmable memory cell includes a differential latching amplifier having a first set of fuse devices coupled to the first input and a second set of fuse devices coupled to the second input. Only one set of fuse devices can be programmed in a memory cell. If one or more fuse devices in a set of fuse devices are programmed, the side having the programmed fuse will present a lower voltage at its input to the differential latching amplifier. Differential latching amplifier outputs a “0” or a “1” depending on the side having the programmed fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.